Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
December 1, 1989IEEE Electron Device Letters

In/sub 0.53/Ga/sub 0.47/As junction field-effect transistors as tunable feedback resistors for integrated receiver preamplifiers

View Full Paper
Ask AI
Bookmark
Share

Authors

JBJ.J. BrownUniversal Display CorporationDLD.C.W. LoUniversity of California, Los AngelesJGJ. T. GardnerUniversity of Southern California

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Brown et al. (1989) studied this question.

synapsesocial.com/papers/6a6fbd66fe4101aa97dfe32dhttps://doi.org/10.1109/55.43149
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Active feedback lightwave receivers1986 · 25 citations
  2. 2GaInAs monolithic photoreceiver integrating p-i-n/JFET with diffused junctions and a resistor1988 · 15 citations
  3. 3Monolithic integration of a planar embedded InGaAs p-i-n detector with InP depletion-mode FET's1985 · 30 citations
  4. 4In0.53Ga0.47As photodiodes with dark current limited by generation-recombination and tunneling1980 · 176 citations
  5. 5Performance of In/sub 0.53/Ga/sub 0.47/As and InP junction field-effect transistors for optoelectronic integrated circuits. I. Device analysis1989 · 14 citations