Simulations of InGaAs JFETs were carried out using a two-dimensional numerical simulator. The results show that the electron drift velocity field characteristic is very important in modelling the Id/Vds behaviour of these devices. From comparison with experimental results, we conclude that it is appropriate to use a velocity field dependence function for InGaAs, similar to the drift velocity function used for Si JFETs.
No takes yet. Share an insight, caveat, or question.
Cordero et al. (1993) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: