Al 1-x In x As layers have been grown on (100) InP substrates by molecular beam epitaxy (MBE). The substrate temperature region, T>580 degrees C, where In loss is known to occur has been explored. It is demonstrated that the loss of indium can be suppressed by increasing the As 4 overpressure during growth. However, the layers grown in this region have high unintentional impurity levels. These are believed to be due to chalcogen impurities originating in the arsenic source.
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Davies et al. (1984) studied this question.
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