Epitaxial films of In0.53Ga0.47As lattice-matched to InP substrates have been grown by molecular beam epitaxy (MBE). The carrier concentrations were as low as 3×1015 cm−3. High-speed back-illuminated PIN photodiodes for use at 0.95–1.6 μm wavelength were made from the resulting layers.
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Lee et al. (1980) studied this question.
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