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February 14, 1980Electronics Letters

Small area InGaAs/InP p-i-n photodiodes: fabrication, characteristics and performance of devices in 274 Mb/s and 45 Mb/s lightwave receivers at 1.31 μm wavelength

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Authors

TLT.P. LeeCBC.A. BurrusAT&T (United States)ADA.G. DentaiInfinera (United States)

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Lee et al. (1980) studied this question.

synapsesocial.com/papers/6a70682f31a3df824328aae6https://doi.org/10.1049/el:19800113
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