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July 1, 1979Journal of Applied Physics

Determination of In-Ga-As phase diagram at 650 °C and LPE growth of lattice-matched In0.53Ga0.47As on InP

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KNKazuo NakajimaRIKEN Center for Brain ScienceTTToshiyuki TanahashiSumitomo Electric Industries (United States)KAKenzo AkitaUniversity of Tsukuba

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Nakajima et al. (1979) studied this question.

synapsesocial.com/papers/6a6fbd97660549caf2c44968https://doi.org/10.1063/1.325575
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  1. 1The incorporation of Ga during LPE growth of In0.53Ga0.47As on (111)B and (100) InP substrates1978 · 13 citations
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  3. 3Liquidus Isotherms in the Ga-In-As System1970 · 25 citations
  4. 4Growth and characterization of InGaAsP–InP lattice-matched heterojunctions1976 · 56 citations
  5. 5Solid Solution in AIIIBVCompounds1958 · 125 citations