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April 1, 1980IEEE Journal of Quantum Electronics

Low threshold Be implanted (GaAl)As laser on semi-insulating substrate

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Authors

DWD. P. WiltCalifornia Institute of TechnologyNBN. Bar-ChaimOpticaSMS. MargalitCalifornia Institute of Technology

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Wilt et al. (1980) studied this question.

synapsesocial.com/papers/6a6fbd9775498292b7091fafhttps://doi.org/10.1109/jqe.1980.1070500
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1GaAs-GaAlAs injection lasers on semi-insulating substrates using laterally diffused junctions1978 · 35 citations
  2. 2Monolithic integration of an injection laser and a metal semiconductor field effect transistor1979 · 58 citations
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  4. 4Be-implanted (GaAl)As stripe geometry lasers1980 · 18 citations
  5. 5Double-heterostructure GaAs-GaAlAs injection lasers on semi-insulating substrates using carrier crowding1977 · 21 citations