Monolithic integration of an injection laser and a metal semiconductor field effect transistor

A new laser structure, the ’’T-laser’’, has been monolithically integrated with a MESFET on a semi-insulating GaAs substrate. Integration is achieved by means of a compatible structure in which the optically active layer of the laser also serves as the electrically active layer of the MESFET. Direct modulation of the laser by means of the transistor is demonstrated.