The effect of temperature on the main photoluminescence peak energies and half-widths in Al0.28Ga0.72As

The main photoluminescence (PL) peak energies and half-widths of bound-exciton and free-electron-to-acceptor transitions in Al 0.28 Ga 0.78 As have been measured precisely at various temperatures between 10 and 200K. In bound-exciton transitions, the emission peaks shift toward lower energies with the increase in temperature accompanied by the small increase of half-widths. On the other hand, in free-electron-acceptor transitions, the emission peaks are independent of temperature changes accompanied by large increases of half-widths.