A study of the ionization rates of electrons and holes in GaAs using a computer analysis of the properties of GaAs IMPATTs

Investigations by Stillman et al. [Appl. Phys. Lett. 24, 471 (1974)] and Ito et al. [J. Appl. Phys. 49, 4607 (1978)], mainly based on photomultiplication measurements, suggest that in GaAs the ionization rates of electrons and holes are not identical. Though the results of the two investigations are in qualitative agreement, there is a considerable difference in the numerical values of the ionization rates. A computer study of the dc properties of the linearly graded and high-low type GaAs IMPATT diodes using the ionization rate data of Stillman et al. and Ito et al. has been carried out, and it has been found that the data of Ito et al. are in closer agreement with the experimental breakdown voltage data.