Optimum structure parameters of GaAs hi-lo IMPATT diodes to give a high-efficiency and a high-output power are experimentally determined in the frequency range from 7 to 18 GHz. The highest efficiency is obtained at any frequency when a diode has a punch-through factor of about 0.6 and is depleted with an electric field strength of 10 kV/cm at the end of the lo region under operation. The optimum lo-region carrier concentration to achieve the highest efficiency and the upper limit of a junction area to obtain a high-output power without decreasing efficiency are found to be simply related to frequency by the following equations:(NL)_{} = (4 × 10¹⁴) · (f/7)³cm-3and(Sⱼ)ₘₐₓ = (20 × 10⁻⁴) · (f/10)-1.9)cm2), respectively, wherefis in gigahertz.
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Nishitani et al. (1979) studied this question.
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