Room-Temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures

Room-temperature mobility of two-dimensional electron gas accumulating at a heterojunction interface in selectively doped GaAs/ N -AlGaAs grown by MBE was shown to be potentially as high as 8,600 cm 2 /Vs with a sheet electron concentration of 5.5×10 11 cm -2 . This is almost twice as high as the mobility in conventional GaAs FETs with typical carrier concentrations.