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November 1, 1980Applied Physics Letters

High mobility of two-dimensional electrons at the GaAs/n-AlGaAs heterojunction interface

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Authors

SHS. HiyamizuOsaka University of EconomicsTMT. MimuraKanazawa UniversityTFToshio FujiiKirin (Japan)

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Hiyamizu et al. (1980) studied this question.

synapsesocial.com/papers/6a828e560de57fd8eeb2827ahttps://doi.org/10.1063/1.92088
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Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Two-dimensional electron gas at differentially doped GaAs–Al<i>x</i>Ga1−<i>x</i>As heterojunction interface1979 · 54 citations
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  3. 3A New Field-Effect Transistor with Selectively Doped GaAs/n-Al<sub>x</sub>Ga<sub>1-x</sub>As Heterojunctions1980 · 787 citations
  4. 4Electron mobilities in modulation-doped semiconductor heterojunction superlattices1978 · 1,516 citations