General theoretical expressions appropriate to calculating the internal and external quantum efficiency of photoluminescence (PL) are derived for a semiconductor of thickness d and bounded by two surfaces with different surface-recombination velocities. The external efficiency expected from thin and thick layers is compared and contrasted. Under certain conditions and adopting reasonable assumptions, we indicate how a single measurement of the steady-state PL can yield information about the minority-carrier diffusion length.
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Duggan et al. (1981) studied this question.
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