Schottky barrier InxGa1−xAs alloy avalanche photodiodes for 1.06 μm

Uniform Schottky barrier avalanche photodiodes with gains greater than 250, rise times less than 200 psec, and good quantum efficiencies at 1.06 μm have been fabricated in InxGa1−xAs alloys. The material used for these devices was grown epitaxially on GaAs substrates using an AsCl3–H2–Ga–In vapor-phase system which permitted grading the epitaxial layers from GsAs to the desired composition.