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October 1, 1980IEEE Journal of Quantum Electronics

GaInAsP/InP DH lasers with a chemically etched facet

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Authors

KIKenichi IgaTokyo Institute of TechnologyMPM. PollackAT&T (United States)BMB.I. MillerMerck & Co., Inc., Rahway, NJ, USA (United States)

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Iga et al. (1980) studied this question.

synapsesocial.com/papers/6a6fbe25e5469ee92be098bfhttps://doi.org/10.1109/jqe.1980.1070360
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Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Injection heterolaser with a short resonator1979 · 6 citations
  2. 2Chemical Etching of InP and GaInAsP for Fabricating Laser Diodes and Integrated Optical Circuits1980 · 40 citations
  3. 3Liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μm1978 · 97 citations