Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 1, 1980Japanese Journal of Applied PhysicsOpen Access

Chemical Etching of InP and GaInAsP for Fabricating Laser Diodes and Integrated Optical Circuits

View Full Paper
Ask AI
Bookmark
Share

Authors

TKToshio KambayashTokyo Institute of TechnologyCKChiyuki KitaharaTokyo Institute of TechnologyKIKenichi IgaTokyo Institute of Technology

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Kambayash et al. (1980) studied this question.

synapsesocial.com/papers/6a881e2ba082a64c2914bd63https://doi.org/10.1143/jjap.19.79
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched one closely related paper. Consider it for comparative context:

  1. 1Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ m1976 · 275 citations