Photoluminescence spectra of In0.53Ga0.47As reveal the presence of hot carriers with effective temperatures as high as Tc ∼600 K. Variation of carrier temperature with excitation intensity identifies the LO phonon emission process as the dominant carrier cooling mechanism with h/ωLO=34 meV. Comparison with GaAs yields a hot-carrier energy loss rate a factor of 3 smaller for the less polar In0.53Ga0.47As.
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Shah et al. (1980) studied this question.
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