A new structure for a GaAs JFET (P-Column Gate FET) is proposed, employing p-column shaped gates in an active n-layer on a semi-insulating substrate, where the current flows through spaces between the gate columns. It was found that Be ion implantation can produce p-column gates. The FET I-V characteristics are also presented and discussed.
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Asai et al. (1980) studied this question.
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