Frequency tuning, power and noise characteristics of a common-gate GaAs f.e.t. oscillator were investigated. By changing the common-gate lead inductance, the frequency was changed by almost two octaves. The f.m. noise of the low-Q factor f.e.t. oscillator was at the same level as that of a medium-Q factor GaAs impatt oscillator.
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Omori et al. (1975) studied this question.
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