Improvement in crystallographical, electrical, and optical properties of InxGa1−x As molecular-beam epitaxial films grown on InP substrates has been made by using a modified premixing method and a flash heat treatment of substrates just prior to growth. All of the relevent properties, especially the photoluminescence property, of the grown films are comparable to the corresponding liquid-phase epitaxial films. The interfacial recombination velocity at the heterojunction between the molecular-beam epitaxial epilayer and the substrates is also comparable with those for the other sets of heterojunctions, such as AlxGa1−x As/GaAs and InxGa1−x P/GaAs.
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Kawamura et al. (1981) studied this question.
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