Lattice deformation and misorientation of InxGa1−xAs epitaxial layers grown on InP substrates by molecular-beam epitaxy

Lattice deformation and misorientation of InxGa1−xAs epitaxial layers grown on InP substrates by molecular-beam epitaxy is measured from rocking curves of an x-ray double-crystal monochrometer. It is concluded that the epitaxial layers are deformed from cubic to tetragonal and misoriented to the substrates except in lattice-matched epilayers. This result suggests that the substrate lattice has a large influence on the structure of the epitaxial layers.