What question did this study set out to answer?

Develop and implement a feedback-loop-based capacitance-voltage technique to accurately profile carrier and doping distributions in reverse-biased semiconductor p-n junctions.

October 1, 1972IEEE Transactions on Electron Devices

A feedback method for investigating carrier distributions in semiconductors

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Authors

GMG. L. MillerAT&T (United States)

Discussion

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Overview

Methodological study demonstrates a feedback-controlled profiling technique for semiconductor carrier distributions, indicating enhanced capability for remote and in situ device characterization.

Key Points

Develop and implement a feedback-loop-based capacitance-voltage technique to accurately profile carrier and doping distributions in reverse-biased semiconductor p-n junctions.
Implemented a feedback loop to provide controlled motion of the depletion layer's low-field boundary in reverse-biased p-n junctions.
Applied constant amplitude modulation to either depletion layer width or electric field to measure carrier density or its reciprocal, respectively.
Configured the apparatus to operate over long coaxial cables to evaluate feasibility for remote and in situ testing environments.
Achieved direct measurement of carrier density and its reciprocal via stabilized depletion layer boundary modulation without standard point-by-point manual voltage stepping.
Enabled sample placement at the end of arbitrary-length coaxial cables, successfully supporting on-line profiling during accelerator ion implantations and temperature-dependent device profiling in cryostats.

Cite This Study

G. L. Miller (1972) studied this question.

synapsesocial.com/papers/6a6fbe708031ec7bb1dbecb5 https://doi.org/10.1109/t-ed.1972.17557

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October 1, 1972IEEE Transactions on Electron Devices

A feedback method for investigating carrier distributions in semiconductors

View Full Paper

Ask AI

Bookmark

Authors

GMG. L. MillerAT&T (United States)

Discussion

Member takes

Overview

Methodological study demonstrates a feedback-controlled profiling technique for semiconductor carrier distributions, indicating enhanced capability for remote and in situ device characterization.

Key Points

Develop and implement a feedback-loop-based capacitance-voltage technique to accurately profile carrier and doping distributions in reverse-biased semiconductor p-n junctions.
Implemented a feedback loop to provide controlled motion of the depletion layer's low-field boundary in reverse-biased p-n junctions.
Applied constant amplitude modulation to either depletion layer width or electric field to measure carrier density or its reciprocal, respectively.
Configured the apparatus to operate over long coaxial cables to evaluate feasibility for remote and in situ testing environments.
Achieved direct measurement of carrier density and its reciprocal via stabilized depletion layer boundary modulation without standard point-by-point manual voltage stepping.
Enabled sample placement at the end of arbitrary-length coaxial cables, successfully supporting on-line profiling during accelerator ion implantations and temperature-dependent device profiling in cryostats.

Cite This Study

G. L. Miller (1972) studied this question.

synapsesocial.com/papers/6a6fbe708031ec7bb1dbecb5 https://doi.org/10.1109/t-ed.1972.17557

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