Oxide layers prepared with bromine water are found to increase the barrier height for Au-InP Schottky diodes. Electrical characteristics are measured and the relationships between the preparation conditions and the diode parameters are examined. The typical value of the barrier height and the ideality factor are 0.83 eV and 1.1, respectively. Some instabilities are observed in the diode characteristics.
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Kamimura et al. (1980) studied this question.
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