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April 1, 1965IEEE Transactions on Electron Devices

The effects of oxide traps on the MOS capacitance

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FHF.P. HeimanBrunswick (United States)GWG. WarfieldPrinceton University

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Heiman et al. (1965) studied this question.

synapsesocial.com/papers/6a6fbe8535aa2c282ce11551https://doi.org/10.1109/t-ed.1965.15475
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