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November 1, 1981IEEE Electron Device Letters

An In0.53Ga0.47As/Si3N4n-channel inversion mode MISFET

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Authors

ALAndrew LiaoTri-Institutional PhD Program in Chemical BiologyRLR. F. LehenyDefense Advanced Research Projects AgencyRNR. E. NahoryUniversity of North Carolina at Chapel Hill

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Liao et al. (1981) studied this question.

synapsesocial.com/papers/6a6fbe95ac440176ef286848https://doi.org/10.1109/edl.1981.25436
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

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  2. 2An In0.53Ga0.47As junction field-effect transistor1980 · 35 citations
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  4. 4Reduction of Interface States and Fabrication of p-Channel Inversion-Type InP-MISFET1980 · 34 citations
  5. 5SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain1968 · 161 citations