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The shape and extent of space charge regions in semiconductor surfaces are briefly discussed. Curves describing the potential as a function of distance inside the semiconductor are obtained by numerical integration of the Poisson equation. The curves apply to all semiconductors. They show the effects of different resistivities and the increased depth of the space charge regions expected in pure III-V compounds over those encountered in Ge and Si.
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Dousmanis et al. (1958) studied this question.
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