Planar Zn-diffused GaAs p-n junctions have been prepared with a 2000-Å surface layer of high-resistivity O-doped Al0.5Ga0.5As. This surface layer significantly reduces the surface recombination current and permits the bulk diffusion current, I∝exp(qV/kT), to dominate at current densities as low as ∼5×10−3 A/cm2.
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Casey et al. (1979) studied this question.
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