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It has been shown through attempts to obtain pure carrier injection for the determination of electron and hole impact ionization rates (α and β) that electroabsorption of recombination radiation can result in significant contamination of the injected currents in direct band-gap semiconductors. The influence of this contamination on the values determined for α and β and the requirements on the device structure to minimize this contamination are discussed.
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Bulman et al. (1981) studied this question.
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