The electroabsorption coefficient of GaAs has been measured in uniform electric fields at wavelengths from 0.91 to 0.93 μm. These measurements were made using Schottky barrier contacts on low-loss GaAs waveguides consisting of high-purity epitaxial GaAs grown on heavily doped GaAs substrates. The experimental results are in good agreement with theoretical calculations of the Franz-Keldysh effect. Electroabsorption detectors with subnanosecond response time and 100% internal quantum efficiency have been integrated into these waveguides. Small values of avalanche gain have been obtained without any intentional guard-ring structure. Integrated electroabsorption modulators with greater than 20-dB depth of modulation were also fabricated.
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Stillman et al. (1976) studied this question.
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