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Double-heterostructure diode lasers with Si-doped active regions have exhibited laser action within the wavelength range 9100–9500 Å under pulsed room-temperature conditions. Threshold current densities are typically 4 × 103−1.1 × 104 A/cm2, and total power conversion efficiencies are ∼ 1–3%.
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Rossi et al. (1972) studied this question.
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