Embedded heterostructure epitaxy: A technique for two-dimensional thin-film definition

Selective multilayer epitaxial growth of GaAs-Ga1−xAlxAs through stripe openings in Al2O3 mask is reported. The technique results in prismatic layers of GaAs and Ga1−xAlxAs ’’embedded’ in each other and leads to controllable uniform structures terminated by crystal faces. The crystal habit (shape) has features which are favorable for fabrication of cw injection lasers, laser arrays, and integrated optics components which require planar definition.