We report the growth and fabrication of LPE multilayer Inx Ga1 −x As homojunction LEDs. Junction edge emission in the 1.0–1.1-μm wavelength range was obtained with external efficiencies of ∼1%. An important feature of the device structure is the incorporation of simple stepwise compositional grading for lattice matching of the substrate and p-n junction layers.
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Nahory et al. (1974) studied this question.
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