The preparation of (Al₂O₃)x(SiO₂)y thin films using [al(OSiEt₃)₃]₂ as a single‐source precursor

Amorphous (Al 2 O 3 ) x (SiO 2 ) y thin films have been grown by atmospheric pressure metal‐organic chemical vapour deposition using the single‐source precursor [Al(OSiEt 3 ) 3 ] 2 . Characterisation by X‐ray photoelectron spectroscopy indicated that the films consisted of a mixture of Al 2 O 3 , SiO 2 and an aluminosilicate. The relative amount of each species was dependent on the deposition temperature and the carrier gas composition. Use of NH 3 as the carrier gas resulted in the increased volatility of the precursor by the in situ formation of the low‐melting Lewis acid–base adduct Al(OSiEt 3 ) 3 (NH 3 ); however, no nitrogen incorporation was observed in these deposited films.