Amorphous aluminum oxide films were deposited at 420°C by thermal decomposition of an aluminum alkoxide. The reducing or oxidizing atmosphere used during deposition affects the chemical and electrical properties of the oxide films. These films have shown superior characteristics when compared to SiO 2 films deposited by a similar process under the same conditions. The dielectric properties of these Al 2 O 3 films compare favorably with anodized Al 2 O 3 films. The resistance of these films to moisture makes them attractive as coatings for passivation of electron devices. The electrical properties of silicon and germanium surfaces covered with these Al 2 O 3 films vary according to the deposition atmosphere.
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J. A. Aboaf (1967) studied this question.