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The ionization rate of carriers in GaAs has been determined as a function of field from photocurrent in a Schottky barrier. Analysis of the data is based on a model which includes the effects of junction widening and light absorption in the semiconductor. The results agree well with earlier reported values. The technique may be valuable for obtaining avalanche measurements in semiconductors for which fabrication of p-n junctions is difficult.
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Gary H. Glover (1973) studied this question.
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