Oxide films up to 2500 Å thick have been grown by anodization of GaAs in the negative glow region of a dc oxygen discharge. Using Auger analysis, as-grown samples were found to contain excess Ga in the bulk of the film and excess As in a wide oxide-GaAs interface region. Preliminary measurements indicate that plasma anodic films grown on both p- and n-type GaAs exhibit electrical properties similar to films formed by liquid anodization.
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Chesler et al. (1978) studied this question.
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