Recombination Radiation as Possible Mechanism of Light Emission from Reverse-Biased p-n Junctions under Breakdown Condition

There are two models, recombination and bremsstrahlung models, proposed for the interpretation of visible light emission from reverse-biased semiconductor junctions under breakdown conditions. The emission spectra are calculated on the basis of these two models and compared with the published experimental results on Si and Ge p-n junctions. Experimental spectra can be interpreted well using the model of recombination between conduction-band electrons and valence-band holes. The spectra calculated on the basis of the bremsstrahlung model cannot be fitted to the experimental ones.