Answers are grounded in this paper and cite their sources.
The multiplication of carriers generated in the space-charge layer of reverse biased silicon pn step junctions has been calculated in terms of the multiplication of electrons and holes injected into the junction. Curves are plotted for p+n and n+p junctions, and good agreement has been found with experimental curves.
No takes yet. Share an insight, caveat, or question.
Nathan Howard (1962) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: