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November 16, 1981Physical Review Letters

Pseudomorphic Structure at the Interface of Ge on Si(111) Studied by High-Energy-Ion Scattering

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TNTadashi NarusawaKochi University of TechnologyWGW. M. GibsonRutgers, The State University of New Jersey

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Narusawa et al. (1981) studied this question.

synapsesocial.com/papers/6a6fd26fac440176ef287a16https://doi.org/10.1103/physrevlett.47.1459
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Also Consider

Synapse has enriched 2 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Ion Beam Crystallography at the Si(100) Surface1981 · 106 citations
  2. 2Atomic Displacements in the Si(111)-(7×7) Surface1980 · 136 citations