We report the performance of a monolithic V-band power amplifier using 0.15-μm double heterostructure pseudomorphic InGaAs/AlGaAs/GaAs HEMT's. The amplifier using a 400-μm device driving a 2×400-μm device. It has demonstrated output power of 313 mW (0.39 W/mm) with 8.95 dB power gain and 19.9% PAE at 59.5 GHz. These data represent the highest reported combination of output power, power gain, and power-added efficiency reported for a V-band monolithic power amplifier.
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Kasody et al. (1994) studied this question.
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