Composite materials composed of randomly dispersed semiconducting ceramic particles in an insulating polymer matrix show a pronounced change in resistivity with pressure. Different amounts of iron oxide (Fe 3 O 4 ) powder and antimony‐doped tin oxide (SnO 2 :Sb) powder were dispersed in an epoxy polymer matrix to form pressure‐sensitive composites. In each family of materials, an insulator‐to‐semiconductor transition is observed in agreement with percolation theory. Composites within a certain range of filler content showed substantial piezoresistive effect under both uniaxial and hydrostatic pressure in which sensitivity is controlled by the choice of filler material and the volume fraction. The effect of temperature on the piezoresistance effect was also examined. Piezoresistors made from Fe 3 O 4 composites showed larger temperature changes than those filled with Sb‐doped SnO 2 .
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Yoshikawa et al. (1990) studied this question.
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