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Experiments are reported that demonstrate the asymmetric switching behavior reported earlier in vertical giant magnetoresistance devices arises from the solid disk geometry of the device that produces a magnetic singularity at the disk center. Annular devices having a 0.1 μm center hole and 0.5 μm outer diameter are shown to switch symmetrically with an Amperian field.
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Bussmann et al. (2001) studied this question.
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