Ordered Sb monolayers and multilayers on GaAs(110) and InP(110) have been studied in in situ by measuring the optical anisotropy (reflectance anisotropy spectroscopy) and the difference of the reflectivity with respect to the clean surface for linear polarized light (surface differential reflectance). The preparation was performed by annealing a 4–5 multilayer thick Sb film on ultrahigh vacuum-cleaved InP(110) and GaAs (110) substrates, which induces an ordered multilayer film of a metastable crystal structure termed 'substrate-stabilized structure'. Annealing to higher temperatures can be utilized to prepare a highly ordered monolayer film with a pseudomorphic lattice structure. Both monolayers and multilayers have a geometrically anisotropic structure owing to the formation of Sb chains, which are derived either from the pseudomorphic growth or from the double-layer structure of the Sb crystal lattice, respectively. The substrate-stabilized multilayers show a strong optical anisotropy of approximately 2–3% at 1.7 eV photon energy on both InP and GaAs substrates which is related to the electronic structure of the multilayer. The ordered monolayers exhibit optical anisotropies of comparable strength around 1.8 to 2.6 eV on GaAs (110) and 2.0 to 2.7 eV on InP (110), which can be assigned to transitions between the electronic surface states.
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Esser et al. (1994) studied this question.
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