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Optical reflectance and reflectance-difference changes resulting from abrupt changes in As and Ga fluences during molecular-beam-epitaxy growth on GaAs(001) are shown to provide surface chemical information, thereby complementing the structural data available from reflection high-energy electron diffraction. Polarization and spectral dependences suggest that the observed optical anisotropies arise from absorption associated with Ga---Ga surface dimer bonds.
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Aspnes et al. (1987) studied this question.
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