Amorphous Sb films ranging in thickness between 170 and 14 000 {} were prepared at 77^∘{}K in three different ways: getter sputtering, evaporation from Sb, and evaporation from PtSb. The electrical resistivity of these various films is well fitted between 30 and 160 ^∘{}K by the relation ρ=ρ₀exp[(T₀T)1/4] with T₀10⁷ ^∘{}K.
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J. J. Hauser (1974) studied this question.
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