What question did this study set out to answer?

Fabricate and characterize high-performance AlGaN-GaN heterojunction field-effect transistors grown directly on high-resistivity silicon substrates.

June 30, 2004IEEE Electron Device Letters

12 W/mm AlGaN–GaN HFETs on Silicon Substrates

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Authors

JJJ. W. JohnsonUniversity of Georgia EPE. L. PinerTexas State University AVAndrei VescanErnst Ruska Centre

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Implication

Experimental study demonstrates a 12 W/mm power density in AlGaN-GaN transistors on silicon substrates, indicating performance competitive with devices on conventional substrates.

Key Points

Fabricate and characterize high-performance AlGaN-GaN heterojunction field-effect transistors grown directly on high-resistivity silicon substrates.
Grew Al0.26Ga0.74N-GaN heterostructures on 100-mm high-resistivity Si (111) wafers via metal-organic chemical vapor deposition.
Fabricated 0.7-μm gate-length devices and evaluated direct current, breakdown, high-frequency, and RF power performance.
Achieved a two-dimensional electron gas sheet resistance of 300 ± 10 Ω/square, maximum drain current density of ~1 A/mm, and breakdown voltage of ~200 V.
Measured a cutoff frequency of 18 GHz and maximum oscillation frequency of 31 GHz for 0.7-μm gate devices.
Delivered a 2.14-GHz continuous-wave power density of 12 W/mm at 50 V bias, with 15.3 dB large-signal gain and 52.7% power-added efficiency.

Cite This Study

Johnson et al. (2004) studied this question.

synapsesocial.com/papers/6a700ffce36a167817e1c981 https://doi.org/10.1109/led.2004.831190

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June 30, 2004IEEE Electron Device Letters

12 W/mm AlGaN–GaN HFETs on Silicon Substrates

View Full Paper

Ask AI

Bookmark

Authors

JJJ. W. JohnsonUniversity of Georgia EPE. L. PinerTexas State University AVAndrei VescanErnst Ruska Centre

Discussion

Member takes

Implication

Experimental study demonstrates a 12 W/mm power density in AlGaN-GaN transistors on silicon substrates, indicating performance competitive with devices on conventional substrates.

Key Points

Fabricate and characterize high-performance AlGaN-GaN heterojunction field-effect transistors grown directly on high-resistivity silicon substrates.
Grew Al0.26Ga0.74N-GaN heterostructures on 100-mm high-resistivity Si (111) wafers via metal-organic chemical vapor deposition.
Fabricated 0.7-μm gate-length devices and evaluated direct current, breakdown, high-frequency, and RF power performance.
Achieved a two-dimensional electron gas sheet resistance of 300 ± 10 Ω/square, maximum drain current density of ~1 A/mm, and breakdown voltage of ~200 V.
Measured a cutoff frequency of 18 GHz and maximum oscillation frequency of 31 GHz for 0.7-μm gate devices.
Delivered a 2.14-GHz continuous-wave power density of 12 W/mm at 50 V bias, with 15.3 dB large-signal gain and 52.7% power-added efficiency.

Cite This Study

Johnson et al. (2004) studied this question.

synapsesocial.com/papers/6a700ffce36a167817e1c981 https://doi.org/10.1109/led.2004.831190

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