Design and Implications of Oxide Stack Engineering in Junctionless Double Gate Devices

This manuscript gives an insight into the usage of SiO 2 material and its replacement with different high‐dielectric constant materials and its behavior for short‐channel devices. The replaced oxide is also used as a spacer. The SiO 2 has a key advantage that it is formed by direct oxidation from silicon and provides an excellent interface with Si material. Whereas, other oxide materials have a poor interface and offer more defects but provide higher capacitance due to high dielectric constant. Hence replacing SiO 2 with other high‐dielectric constant materials will be more beneficial with stacking of SiO 2 with the same effective oxide thickness. This study illustrates the effect of high‐dielectric constant materials as a gate oxide and as a spacer. Further to improve the performance, a stack of SiO 2 with high‐dielectric constant materials has been demonstrated with off and on state behavior.