The effect of additive-pulse mode locking on a semiconductor laser is studied experimentally. We reduced the pulse duration from 19 to 6 ps with an external auxiliary cavity containing a 1.3-m fiber in a synchronously pumped external-cavity surface-emitting In0.53Ga0.47 As laser. The relatively weak effect of additive-pulse mode locking on pulse shortening is primarily due to the large gain cross section of the semiconductor active medium in this system.
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Watanabe et al. (1993) studied this question.
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