Excellent Uniformity and Multilevel Operation in Formation-Free Low Power Resistive Switching Memory Using IrOx/AlOx/W Cross-Point

Excellent uniformity and multilevel operation in formation-free low-power resistive switching memory fabricated using the IrO x /AlO x /W cross-point structure have been investigated. The thickness of the deposited films has been measured by high-resolution transmission electron microscopy with energy dispersive X-ray spectroscopy for each layer. The cross-point resistive switching memory devices have a tight distribution of SET/RESET voltages and low/high-resistance states as well as switching cycles. A high resistance ratio of >8×10 2 is obtained. This memory device shows excellent AC endurance of >5×10 3 cycles, read endurance of >1×10 5 cycles, and 10-year-data retention at 85 °C at a low power of 55 µW and low-current compliances of 50–200 µA. This study is not only important for cross-point memories but will also help in the design of high-density nanoscale nonvolatile memories in the future.